Simulation of quality of SiC/Si interface during MBE deposition of C on Si

✍ Scribed by D. V. Kulikov; A. A. Schmidt; S. A. Korolev; F. M. Morales; Th. Stauden; Yu. V. Trushin; J. Pezoldt

• Publisher: John Wiley and Sons
• Year: 2006
• Tongue: English
• Weight: 112 KB
• Volume: 37
• Category: Article
• ISSN: 0933-5137
• DOI: 10.1002/mawe.200600080

✦ Synopsis

In the present paper we simulate the processes accompanying the SiC/Si epitaxial growth. The model suggested describes the formation and growth of voids at SiC/Si interface. These voids are sources of Si atoms for SiC growth. According to the model the size distribution function was obtained being in good agreement with experimental data. The influence of surfactants on the nucleation and growth of SiC nanoislands on Si was studied as well.