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Simulations and Experiments of 3C-SiC/Si Heteroepitaxial Growth

✍ Scribed by M. Kitabatake

Publisher: John Wiley and Sons
Year: 1997
Tongue: English
Weight: 648 KB
Volume: 202
Category: Article
ISSN: 0370-1972
DOI: 10.1002/1521-3951(199707)202:1<405::aid-pssb405>3.0.co;2-5

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## Abstract This article describes growth and characterization of the highest quality reproducible 3C‐SiC heteroepitaxial films ever reported. By properly nucleating 3C‐SiC growth on top of perfectly on‐axis (0001) 4H‐SiC mesa surfaces completely free of atomic scale steps and extended defects, gro