Early stages of growth of β-SiC on Si by MBE
✍ Scribed by K. Zekentes; V. Papaioannou; B. Pecz; J. Stoemenos
- Publisher
- Elsevier Science
- Year
- 1995
- Tongue
- English
- Weight
- 706 KB
- Volume
- 157
- Category
- Article
- ISSN
- 0022-0248
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
## Abstract Initial stages of SiC crystal growth by Physical Vapor Transport method were investigated. The following features were observed: (a) many nucleation crystallization centres appeared on the seed surface during the initial stage of the growth, (b) at the same places many separate flat fac
In the present paper we simulate the processes accompanying the SiC/Si epitaxial growth. The model suggested describes the formation and growth of voids at SiC/Si interface. These voids are sources of Si atoms for SiC growth. According to the model the size distribution function was obtained being i