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First stages of the MBE growth of InAs on (001)GaAs

✍ Scribed by F. Houzay; C. Guille; J.M. Moison; P. Henoc; F. Barthe


Publisher
Elsevier Science
Year
1987
Tongue
English
Weight
569 KB
Volume
81
Category
Article
ISSN
0022-0248

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MBE growth and properties of low-density
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## Abstract We present the results of a comprehensive study carried out on morphological, structural and optical properties of InAs/GaAs quantum dot structures grown by Molecular Beam Epitaxy. InAs quantum dots were deposited at low growth rate and high growth temperature and were capped with InGaA