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X-Ray Interface Characterization of Buried InAs Layers on GaAs (001)

โœ Scribed by K. Zhang; A. Foede; Th. Schmidt; P. Sonntag; Ch. Heyn; G. Materlik; W. Hansen; J. Falta

Publisher
John Wiley and Sons
Year
1999
Tongue
English
Weight
140 KB
Volume
215
Category
Article
ISSN
0370-1972

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๐Ÿ“œ SIMILAR VOLUMES

X-Ray Diffraction Analysis of the In/Ga
X-Ray Diffraction Analysis of the In/Ga and In/Al Interface Diffusion in Superlattices (GaAs)n(InAs)(AlAs)n/GaAs(001) and (AlAs)n(InAs)(GaAs)n/GaAs(001)
โœ Jose Fayos; Mercedes Perez-Mendez ๐Ÿ“‚ Article ๐Ÿ“… 1993 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 225 KB

Differences between In diffusion through InAs/AIAs and InAs/GaAs interfaces have been studied by X-ray diffraction in two crystals grown on \(\mathrm{GaAs}(001)\) substrates by atomic layer molecular beam epitaxy. The two samples were designed to include one InAs layer into an AlAs/GaAs superlattice