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Simulation of post-growth Be diffusion in InGaAsP grown by GSMBE

✍ Scribed by S. Koumetz; K. Ketata; M. Ketata; J. Marcon

Book ID
117627389
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
176 KB
Volume
15
Category
Article
ISSN
0927-0256

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πŸ“œ SIMILAR VOLUMES

Post-growth diffusion of be doped ingaas
Post-growth diffusion of be doped ingaas epitaxial layers: experimental and simulated distributions
✍ S. Koumetz; J. Marcon; K. Ketata; M. Ketata; F. Lefebvre; P. Martin; P. Launay πŸ“‚ Article πŸ“… 1996 πŸ› Elsevier Science 🌐 English βš– 350 KB

Be diffusion during post-growth annealing has been investigated from InGaAs epitaxial layers grown between InGaAs undoped layers. A General Substitutional-Interstitial Diffusion mechanism is proposed to explain the observed concentration profiles and related Be diffusion. The concentration dependen