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Redistribution of Be in InGaAsP layers grown by GSMBE during post-growth annealing

โœ Scribed by K Ketata; M Ketata; S Koumetz; J Marcon

Book ID
117625313
Publisher
Elsevier Science
Year
1999
Tongue
English
Weight
114 KB
Volume
285
Category
Article
ISSN
0925-8388

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๐Ÿ“œ SIMILAR VOLUMES

Redistribution phenomenon of residual im
Redistribution phenomenon of residual impurities in undoped GaAs epitaxial layers grown by MOCVD as a function of growth time
โœ Herzl Aharoni ๐Ÿ“‚ Article ๐Ÿ“… 1984 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 361 KB

It is experimentally demonstrated that under certain growth conditions, the deposition time of intentionally doped single-crystal GaAs mono-epitaxial layers grown by Metallic-Organo-Chemical Vapor Deposition (MOCVD) on (100) GaAs substrates strongly influences the residual impurities content. Five s