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Effects of Growth Temperature on Indium Incorporation in InAlN Alloys Grown by GSMBE on Si(111)

✍ Scribed by Md Rakib Uddin, Mahesh Pandikunta, Vladimir Mansurov, Sandeep Sohal, Denis Myasishchev, Georgiy M. Guryanov, Vladimir Kuryatkov, Mark Holtz, Sergey Nikishin

Book ID
113087319
Publisher
Springer US
Year
2012
Tongue
English
Weight
405 KB
Volume
41
Category
Article
ISSN
0361-5235

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## Abstract Crack‐free GaN films have been achieved by inserting an In‐doped low‐temperature (LT) AlGaN interlayer grown on silicon by metalorganic chemical vapor deposition. The relationship between lattice constants __c__ and __a__ obtained by X‐ray diffraction analysis shows that indium doping i