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Effect of lower growth temperature on C incorporation in GeC epilayers on Si(0 0 1) grown by MBE

✍ Scribed by M. Okinaka; Y. Hamana; T. Tokuda; J. Ohta; M. Nunoshita

Publisher: Elsevier Science
Year: 2003
Tongue: English
Weight: 106 KB
Volume: 16
Category: Article
ISSN: 1386-9477
DOI: 10.1016/s1386-9477(02)00659-8

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