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Capacitance investigation of Ge nanoclusters on a silicon (0 0 1) surface grown by MBE at low temperatures

✍ Scribed by O.V. Feklisova; E.B. Yakimov; L.V. Arapkina; V.A. Chapnin; K.V. Chizh; V.P. Kalinushkin; V.A. Yuryev

Publisher: Elsevier Science
Year: 2009
Tongue: English
Weight: 226 KB
Volume: 404
Category: Article
ISSN: 0921-4526
DOI: 10.1016/j.physb.2009.08.164

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Capacitance investigation of Ge nanoclusters on a silicon (0&#xa0;0&#xa0;1) surface grown by MBE at low temperatures

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