✦ LIBER ✦
Post-growth diffusion of be doped ingaas epitaxial layers: experimental and simulated distributions
✍ Scribed by S. Koumetz; J. Marcon; K. Ketata; M. Ketata; F. Lefebvre; P. Martin; P. Launay
- Book ID
- 103955172
- Publisher
- Elsevier Science
- Year
- 1996
- Tongue
- English
- Weight
- 350 KB
- Volume
- 37
- Category
- Article
- ISSN
- 0921-5107
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✦ Synopsis
Be diffusion during post-growth annealing has been investigated from InGaAs epitaxial layers grown between InGaAs undoped layers.
A General Substitutional-Interstitial Diffusion mechanism is proposed to explain the observed concentration profiles and related Be diffusion. The concentration dependent diffusivity has also been covered to perform an improved data fitting of Be diffusion profiles.