SIMS study of effect of Cr adhesion layer on the thermal stability of silver selenide thin films on Si

✍ Scribed by Bhaskar Chandra Mohanty; A.K. Tyagi; A.K. Balamurugan; Shikha Varma; S. Kasiviswanathan

• Publisher: Elsevier Science
• Year: 2008
• Tongue: English
• Weight: 283 KB
• Volume: 266
• Category: Article
• ISSN: 0168-583X
• DOI: 10.1016/j.nimb.2007.11.029

✦ Synopsis

Effect of heat treatment on silver selenide films grown from diffusion-reaction of Ag and Se films on Cr-buffered Si substrates was investigated up to 400 °C. X-ray diffraction (XRD), Scanning electron microscopy (SEM), Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS) were used to characterize the films. XRD patterns of the films showed stress assisted change in preferential orientation of the films upon annealing: the films annealed at 200 °C exhibited a strong orientation along (2 0 0) plane, which changed to (0 1 3) after annealing at 300 and 400 °C. Dynamic SIMS measurements showed that Cr is confined to the interface and that there is no diffusion of Cr into silver selenide.