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Effect of carbon on the thermal stability of a Si atomic layer on Ge(1 0 0)

✍ Scribed by Masaki Fujiu; Kazuya Takahashi; Masao Sakuraba; Junichi Murota


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
136 KB
Volume
224
Category
Article
ISSN
0169-4332

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Effect of Ba termination layer on chemic
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During the deposition process of high-k gate oxides on Ge, the Ge interface tends to be oxidized to form GeO x , leading to the introduction of interface states which compromise transistor performance. It has been suggested that a Ba termination layer on Ge could fulfill the same passivating role on