Thickness dependence on thermal stability of sputtered Ag nanolayer on Ti/Si(1 0 0)
β Scribed by O. Akhavan; A.Z. Moshfegh
- Publisher
- Elsevier Science
- Year
- 2007
- Tongue
- English
- Weight
- 641 KB
- Volume
- 254
- Category
- Article
- ISSN
- 0169-4332
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π SIMILAR VOLUMES
The chemisorption of one monolayer Ag atoms on an ideal Si(1 0 0) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The adsorption energies (E ad ) of different sites are calculated. It is found that the adsorbed Ag atoms are more favorable on C site (fo
When the thickness of InGaN film grown on (0 0 0 1) GaN is beyond a critical value, the compressive strain will be relaxed through dislocation generation or three-dimensional growth. We calculate the InGaN critical thicknesses for dislocation generation and three-dimensional growth depending on the