Temperature coefficient of resistance (TCR) and resistivity of films are crucial factors for thermal resistive sensors and concerned with microstructure. In this paper, a Ta-Si-N thin film with high negative TCR of -6250 ppm/ • C at 30-100 • C has been fabricated on the silicon substrates by reactiv
Effect of Si/Ta and nitrogen ratios on the thermal stability of Ta–Si–N thin films
✍ Scribed by C.K. Chung; T.S. Chen
- Publisher
- Elsevier Science
- Year
- 2010
- Tongue
- English
- Weight
- 743 KB
- Volume
- 87
- Category
- Article
- ISSN
- 0167-9317
No coin nor oath required. For personal study only.
📜 SIMILAR VOLUMES
The oxidation resistance and mechanical properties of Ta-Si-N films at high temperature are important issues for application. In this paper, quasi-amorphous Ta-Si-N thin films were fabricated by using reactive magnetron co-sputtering at different Si/Ta power ratios and nitrogen flow ratios (FN 2 % =
Effect of heat treatment on silver selenide films grown from diffusion-reaction of Ag and Se films on Cr-buffered Si substrates was investigated up to 400 °C. X-ray diffraction (XRD), Scanning electron microscopy (SEM), Secondary ion mass spectrometry (SIMS) and X-ray photoelectron spectroscopy (XPS