## Abstract The primary beam energy and species (Cs^+^, Ar^+^) dependence of ultra low energy SIMS depth profiles of ultraβshallow boron implants into CVD grown diamond is investigated in this paper. The data are compared with TRIM simulation of the 5 keV ^11^B^+^ implant. Cs^+^ profiles (1 keV, 30
β¦ LIBER β¦
SIMS-characterization of ultra shallow boron-profiles after BF2+-and B+-low-energy-implantation in silicon
β Scribed by O. Kretzer; G. Lenk; W. Wesch; U. Gunst
- Book ID
- 112291963
- Publisher
- Springer
- Year
- 1994
- Tongue
- English
- Weight
- 271 KB
- Volume
- 349
- Category
- Article
- ISSN
- 1618-2650
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