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SIMS-characterization of ultra shallow boron-profiles after BF2+-and B+-low-energy-implantation in silicon

✍ Scribed by O. Kretzer; G. Lenk; W. Wesch; U. Gunst


Book ID
112291963
Publisher
Springer
Year
1994
Tongue
English
Weight
271 KB
Volume
349
Category
Article
ISSN
1618-2650

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✍ GuzmΓ‘n de la Mata, B. ;Dowsett, M. G. ;Palitsin, V. πŸ“‚ Article πŸ“… 2005 πŸ› John Wiley and Sons 🌐 English βš– 186 KB

## Abstract The primary beam energy and species (Cs^+^, Ar^+^) dependence of ultra low energy SIMS depth profiles of ultra‐shallow boron implants into CVD grown diamond is investigated in this paper. The data are compared with TRIM simulation of the 5 keV ^11^B^+^ implant. Cs^+^ profiles (1 keV, 30

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