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SIMS and depth profiling of semiconductor structures

✍ Scribed by B.G. Svensson; M.K. Linnarsson; B. Mohadjeri; M. Petravić; J.S. Williams


Book ID
113285846
Publisher
Elsevier Science
Year
1994
Tongue
English
Weight
801 KB
Volume
85
Category
Article
ISSN
0168-583X

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📜 SIMILAR VOLUMES


SIMS depth profiling of TiOxNy films
✍ Metson, J. B.; Prince, K. E. 📂 Article 📅 1999 🏛 John Wiley and Sons 🌐 English ⚖ 112 KB 👁 1 views

Amorphous TiO x N y films of varying stoichiometry have been deposited on Si and Cu substrates using ionassisted deposition (IAD). The structure of the films and the effects of annealing in the 200-450 °C range have been examined. Secondary ion mass spectrometry (SIMS) has been used to investigate