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Simplified quantitative stress-induced leakage current (SILC) model for MOS devices

โœ Scribed by M. Ossaimee; K. Kirah; W. Fikry; A. Girgis; O.A. Omar


Book ID
104057862
Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
224 KB
Volume
46
Category
Article
ISSN
0026-2714

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