Identification of stress-induced leakage current components and the corresponding trap models in SiO2 films [MOS transistors]

✍ Scribed by Sakakibara, K.; Ajika, N.; Hatanaka, M.; Miyoshi, H.; Yasuoka, A.

• Book ID: 114537087
• Publisher: IEEE
• Year: 1997
• Tongue: English
• Weight: 178 KB
• Volume: 44
• Category: Article
• ISSN: 0018-9383
• DOI: 10.1109/16.644649