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Modeling and simulation of stress-induced leakage current in ultrathin SiO2 films

โœ Scribed by Ricco, B.; Gozzi, G.; Lanzoni, M.


Book ID
114537363
Publisher
IEEE
Year
1998
Tongue
English
Weight
213 KB
Volume
45
Category
Article
ISSN
0018-9383

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Low voltage stress-induced leakage curre
โœ Tingting Tan; Zhengtang Liu; Hao Tian; Wenting Liu ๐Ÿ“‚ Article ๐Ÿ“… 2010 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 367 KB

The conduction mechanism and the behavior of stress-induced leakage current (SILC) through the HfO 2 high-k layers in metal-oxide-semiconductor (MOS) structures have been investigated. Assisted tunneling of electrons via stress-induced interface traps and bulk oxide traps are responsible for the SIL