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A model of the stress induced leakage current in gate oxides

✍ Scribed by Larcher, L.; Paccagnella, A.; Ghidini, G.

Book ID
114538565
Publisher
IEEE
Year
2001
Tongue
English
Weight
88 KB
Volume
48
Category
Article
ISSN
0018-9383

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πŸ“œ SIMILAR VOLUMES

Stress induced leakage current in ultra-
Stress induced leakage current in ultra-thin gate oxides after constant current stress
✍ A. Scarpa; G. Ghibaudo; G. Ghidini; G. Pananakakis; A. Paccagnella πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 216 KB

Constant current stress induced leakage currents are studied in very thin oxide devices, for both stress polarities. This current has been investigated for both positive and negative gate voltage measurements. Stress induced leakage current (SILC) physical nature has been studied and an interpretati