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Model of leakage current induced by dynamic stress in thin EEPROM tunnel oxides

โœ Scribed by J.P. Sorbier; S. Croci; B. Imbert; C. Plossu


Book ID
117146493
Publisher
Elsevier Science
Year
2003
Tongue
English
Weight
227 KB
Volume
322
Category
Article
ISSN
0022-3093

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Stress induced leakage current in ultra-
โœ A. Scarpa; G. Ghibaudo; G. Ghidini; G. Pananakakis; A. Paccagnella ๐Ÿ“‚ Article ๐Ÿ“… 1997 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 216 KB

Constant current stress induced leakage currents are studied in very thin oxide devices, for both stress polarities. This current has been investigated for both positive and negative gate voltage measurements. Stress induced leakage current (SILC) physical nature has been studied and an interpretati