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Unified model for QBD prediction for thin gate oxide MOS devices with constant voltage and current stress

✍ Scribed by Mohammed T. Quddus; Thomas A. DeMassa; Julian J. Sanchez


Book ID
114156028
Publisher
Elsevier Science
Year
2000
Tongue
English
Weight
695 KB
Volume
51-52
Category
Article
ISSN
0167-9317

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