Silicon nitride and RF MEMS power devices
β Scribed by Gail Purvis
- Publisher
- Elsevier Science
- Year
- 2006
- Tongue
- English
- Weight
- 147 KB
- Volume
- 19
- Category
- Article
- ISSN
- 0961-1290
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π SIMILAR VOLUMES
In this paper, we demonstrate efficient modeling approach for simulation, analysis, design, and optimization of multiport radio frequency microelectromechanical systems (RF MEMS) resonating structures embedded in RF circuits. An in-house finite element method (FEM) solver is utilized to develop accu
We have developed a novel reconfigurable matching network based on the loaded-line technique. The network is composed of N-switched capacitors (N β«Ψβ¬ 4 -8) with a capacitance ratio of 4 -5:1 and is suitable for power amplifiers at 4 -18 GHz, or as an impedance tuner for noise parameter and load-pull
## Abstract In this article, we present a recent study on enhancement of the power handling capability in wideband Ohm contact type RF MEMS switch. The series Ohm contact switch presents a very good wideband RF performance in the DC to 30 GHz. To improve its power handling capability, switch unit c