Study on RF MEMS switch with four parallel Ohm contacts for power handling enhancement
✍ Scribed by Zewen Liu; Zhihao Hou; Zhijian Li
- Publisher
- John Wiley and Sons
- Year
- 2010
- Tongue
- English
- Weight
- 241 KB
- Volume
- 52
- Category
- Article
- ISSN
- 0895-2477
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✦ Synopsis
Abstract
In this article, we present a recent study on enhancement of the power handling capability in wideband Ohm contact type RF MEMS switch. The series Ohm contact switch presents a very good wideband RF performance in the DC to 30 GHz. To improve its power handling capability, switch unit consisted of four parallel single Ohm contact (FPOC) had been designed, fabricated, and measured. In this way, the power handling capability can be improved because of the reduction of contact resistance. The measurement results reveal that the FPOC switch insertion loss is 0.1 dB at 4 GHz and 0.3 dB at 10 GHz; its isolations are 25 dB at 4 GHz and −16 dB at 10 GHz. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 665–667, 2010; Published online in Wiley InterScience (www.interscience.wiley.com). DOI 10.1002/mop.25025