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Silicon nanowires fabricated by means of an underetching technique

✍ Scribed by S. Ciucci; F. D’Angelo; A. Diligenti; B. Pellegrini; G. Pennelli; M. Piotto

Book ID
108207408
Publisher
Elsevier Science
Year
2005
Tongue
English
Weight
277 KB
Volume
78-79
Category
Article
ISSN
0167-9317

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✍ Jia, G. ;Kittler, M. ;Su, Z. ;Yang, D. ;Sha, J. 📂 Article 📅 2006 🏛 John Wiley and Sons 🌐 English ⚖ 133 KB

## Abstract Silicon nanowires (NWs) fabricated by thermal evaporation of SiO were studied by cathodoluminescence. A band around 1550 nm (0.8 eV) was observed. It appears above 225 K and its intensity increases with increasing temperature. The broad band consists of the defect‐related D1 and D2 line