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Cathodoluminescence investigation of silicon nanowires fabricated by thermal evaporation of SiO

✍ Scribed by G. Jia; T. Arguirov; M. Kittler; Z. Su; D. Yang; J. Sha

Book ID
111443750
Publisher
Springer
Year
2007
Tongue
English
Weight
178 KB
Volume
41
Category
Article
ISSN
1063-7826

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1.5 Β΅m luminescence of silicon nanowires
1.5 Β΅m luminescence of silicon nanowires fabricated by thermal evaporation of SiO
✍ Jia, G. ;Kittler, M. ;Su, Z. ;Yang, D. ;Sha, J. πŸ“‚ Article πŸ“… 2006 πŸ› John Wiley and Sons 🌐 English βš– 133 KB

## Abstract Silicon nanowires (NWs) fabricated by thermal evaporation of SiO were studied by cathodoluminescence. A band around 1550 nm (0.8 eV) was observed. It appears above 225 K and its intensity increases with increasing temperature. The broad band consists of the defect‐related D1 and D2 line