1.5 Β΅m luminescence of silicon nanowires
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Jia, G. ;Kittler, M. ;Su, Z. ;Yang, D. ;Sha, J.
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Article
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2006
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John Wiley and Sons
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English
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## Abstract Silicon nanowires (NWs) fabricated by thermal evaporation of SiO were studied by cathodoluminescence. A band around 1550 nm (0.8 eV) was observed. It appears above 225 K and its intensity increases with increasing temperature. The broad band consists of the defectβrelated D1 and D2 line