𝔖 Bobbio Scriptorium
✦   LIBER   ✦

1.5 µm luminescence of silicon nanowires fabricated by thermal evaporation of SiO

✍ Scribed by Jia, G. ;Kittler, M. ;Su, Z. ;Yang, D. ;Sha, J.

Publisher
John Wiley and Sons
Year
2006
Tongue
English
Weight
133 KB
Volume
203
Category
Article
ISSN
0031-8965

No coin nor oath required. For personal study only.

✦ Synopsis

Abstract

Silicon nanowires (NWs) fabricated by thermal evaporation of SiO were studied by cathodoluminescence. A band around 1550 nm (0.8 eV) was observed. It appears above 225 K and its intensity increases with increasing temperature. The broad band consists of the defect‐related D1 and D2 lines and is supposed to be formed by extended defects within the NWs that are decorated with oxygen. Moreover, luminescence bands are found that are related to Si oxide and/or the interface between Si and Si oxide. In addition, the Si band‐to‐band line and the G center are observed. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

📜 SIMILAR VOLUMES

Luminescence lifetime of the 1.5-μm emis
Luminescence lifetime of the 1.5-μm emission of β-FeSi2 precipitate layers in silicon
✍ B Schuller; R Carius; S Lenk; S Mantl 📂 Article 📅 2002 🏛 Elsevier Science 🌐 English ⚖ 188 KB

Semiconducting iron disilicide precipitates in silicon were fabricated by ion beam synthesis and characterised by photoluminescence and TEM. We have measured the decay time of the 1.55-mm line, which was found to be 10 ms at 10 K. No evidence for a fast, direct transition could be found from the tim