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Fabrication of ZnO tetrapods on silicon substrate by thermal evaporation

โœ Scribed by Haiming Zhang; Yujie Li; Guofeng Hu; Bo Gao; Yanjun Zhu

Publisher
Springer US
Year
2009
Tongue
English
Weight
231 KB
Volume
21
Category
Article
ISSN
0957-4522

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Arsenic-doped ZnO films fabricated on si
Arsenic-doped ZnO films fabricated on silicon substrates by pulsed laser ablation
โœ Yiqun Shen; Wei Hu; Tingwei Zhang; Xiaofeng Xu; Jian Sun; Jiada Wu; Zhifeng Ying ๐Ÿ“‚ Article ๐Ÿ“… 2008 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 159 KB

We report the preparation of arsenic-doped ZnO films on silicon(1 0 0) using ZnO/As 2 O 3 targets by pulsed laser ablation. As 2 O 3 was used as a p-type dopant source material for arsenic doping in ZnO. Hall effect measurements show that the stable p-type films with hole carrier concentration of ab