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One-dimensional silicon nanostructures fabricated by thermal evaporation

✍ Scribed by Jun Yu; Jian Sha; Lei Wang; Qing Yang; Deren Yang

Publisher
Elsevier Science
Year
2006
Tongue
English
Weight
391 KB
Volume
26
Category
Article
ISSN
0928-4931

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## Abstract Silicon nanowires (NWs) fabricated by thermal evaporation of SiO were studied by cathodoluminescence. A band around 1550 nm (0.8 eV) was observed. It appears above 225 K and its intensity increases with increasing temperature. The broad band consists of the defect‐related D1 and D2 line