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Luminescence lifetime of the 1.5-μm emission of β-FeSi2 precipitate layers in silicon

✍ Scribed by B Schuller; R Carius; S Lenk; S Mantl

Publisher
Elsevier Science
Year
2002
Tongue
English
Weight
188 KB
Volume
60
Category
Article
ISSN
0167-9317

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✦ Synopsis

Semiconducting iron disilicide precipitates in silicon were fabricated by ion beam synthesis and characterised by photoluminescence and TEM. We have measured the decay time of the 1.55-mm line, which was found to be 10 ms at 10 K. No evidence for a fast, direct transition could be found from the time resolved photoluminescence measurements. Furthermore, we have measured the electroluminescence decay time of a demonstrator FeSi -Si light emitting device. This shows a fast time response of below 30 ns.

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