## Abstract Samples containing silicon nanowires (SiβNWs) and highly porous structures (PβSi) were prepared by electroless wet chemical etching (EWCE) of crystalline silicon wafers using various etching parameters. Photoluminescence (PL) measurements were performed with excitation at 488βnm and a p
β¦ LIBER β¦
Structural and optical characteristics of silicon nanowires fabricated by wet chemical etching
β Scribed by Meiguang Zhu; Xuejiao Chen; Zhiliang Wang; Yun Chen; Dianfei Ma; Hui Peng; Jian Zhang
- Book ID
- 108109444
- Publisher
- Elsevier Science
- Year
- 2011
- Tongue
- English
- Weight
- 700 KB
- Volume
- 511
- Category
- Article
- ISSN
- 0009-2614
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