Fabrication of high-aspect-ratio silicon nanostructures using near-field scanning optical lithography and silicon anisotropic wet-etching process

Densely Packed Arrays of Ultra-High-Aspe

Densely Packed Arrays of Ultra-High-Aspect-Ratio Silicon Nanowires Fabricated using Block-Copolymer Lithography and Metal-Assisted Etching

✍ Shih-Wei Chang; Vivian P. Chuang; Steven T. Boles; Caroline A. Ross; Carl V. Tho 📂 Article 📅 2009 🏛 John Wiley and Sons 🌐 English ⚖ 693 KB

## Abstract Metal‐assisted etching is used in conjunction with block‐copolymer lithography to create ordered and densely‐packed arrays of high‐aspect‐ratio single‐crystal silicon nanowires with uniform crystallographic orientations. Nanowires with diameters and spacings down to 19 nm and 10 nm, res