Electrical Properties of Silicon Nanowire Fabricated by Patterning and Oxidation Process
β Scribed by M. Lee; H. Kim; H. Lee; S. Nam; W. Park; K. Kim
- Book ID
- 126643081
- Publisher
- IEEE
- Year
- 2012
- Tongue
- English
- Weight
- 393 KB
- Volume
- 11
- Category
- Article
- ISSN
- 1536-125X
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π SIMILAR VOLUMES
## Abstract Ultra thin (8 nm) silicon nanowires have been fabricated by Atomic Force Microscopy (AFM) lithography on an insulator layer starting from Silicon On Insulator (SOI) substrates. Electrical measurements reveal a high sensitivity of the electron transport in these ultra thin wires to the c
## Abstract Graded silicon nanowire (SiNW) pβn homojunctions were prepared by an electroless metal deposition method on asβprepared planar Si pβn junctions made by the B^+^ diffusion method. The nanowire pβn junctions show good rectifying behavior and their turnβon voltages (0.78 V at room temperat