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Fabrication and electrical properties of ultra-thin silicon nanowires

✍ Scribed by Rochdi, N. ;Tonneau, D. ;Jandard, F. ;Dallaporta, H. ;Safarov, V.

Publisher
John Wiley and Sons
Year
2008
Tongue
English
Weight
280 KB
Volume
205
Category
Article
ISSN
0031-8965

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✦ Synopsis

Abstract

Ultra thin (8 nm) silicon nanowires have been fabricated by Atomic Force Microscopy (AFM) lithography on an insulator layer starting from Silicon On Insulator (SOI) substrates. Electrical measurements reveal a high sensitivity of the electron transport in these ultra thin wires to the charge trapping on the Si/SiO~2~ interface states. (Β© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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