## Abstract Ultra thin (8 nm) silicon nanowires have been fabricated by Atomic Force Microscopy (AFM) lithography on an insulator layer starting from Silicon On Insulator (SOI) substrates. Electrical measurements reveal a high sensitivity of the electron transport in these ultra thin wires to the c
✦ LIBER ✦
Size-reduced silicon nanowires: Fabrication and electrical characterization
✍ Scribed by Robert Juhasz; Kai Kylmänen; Augustinas Galeckas; Jan Linnros
- Publisher
- Elsevier Science
- Year
- 2005
- Tongue
- English
- Weight
- 240 KB
- Volume
- 25
- Category
- Article
- ISSN
- 0928-4931
No coin nor oath required. For personal study only.
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