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Growth kinetics and electrical characteristics of ultra-thin pyrogenic silicon oxide

โœ Scribed by M. Depas; B. Vermeire; P.W. Mertens; M.M. Heyns

Publisher
Elsevier Science
Year
1995
Tongue
English
Weight
275 KB
Volume
28
Category
Article
ISSN
0167-9317

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๐Ÿ“œ SIMILAR VOLUMES

Kinetics of thermal growth of thin silic
Kinetics of thermal growth of thin silicon oxide films
โœ G.C. Sarti; F. Santarelli; G. Camera Roda ๐Ÿ“‚ Article ๐Ÿ“… 1986 ๐Ÿ› Elsevier Science ๐ŸŒ English โš– 727 KB

thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order