thermal growth of dry SiOs layers is usually described by the so-called linear parabolic equation, based on the assumption that oxygen diffusion takes place in the oxide layer according to Fick's law with constant dilfusivity, and that the oxidation occurs at the Si-Si02 interface with a first-order
Kinetics of growth of thin anodic oxides of silicon at constant voltages
β Scribed by S.K. Sharma; B.C. Chakravarty; S.N. Singh; B.K. Das; D.C. Parashar; J. Rai; Prabhat K. Gupta
- Publisher
- Elsevier Science
- Year
- 1989
- Tongue
- English
- Weight
- 659 KB
- Volume
- 50
- Category
- Article
- ISSN
- 0022-3697
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