Fabrication of ultra-thin strained silicon on insulator
✍ Scribed by T. S. Drake; C. Ní Chléirigh; M. L. Lee; A. J. Pitera; E. A. Fitzgerald; D. A. Antoniadis; D. H. Anjum; J. Li; R. Hull; N. Klymko; J. L. Hoyt
- Publisher
- Springer US
- Year
- 2003
- Tongue
- English
- Weight
- 777 KB
- Volume
- 32
- Category
- Article
- ISSN
- 0361-5235
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📜 SIMILAR VOLUMES
Strained silicon devices provide for an enhanced carrier mobility compared to that of unstrained silicon devices of identical dimensions. The device performance gets even better when using strained silicon on insulator material. We report experimental procedures based on wafer bonding, smart cutting
## Abstract Ultra thin (8 nm) silicon nanowires have been fabricated by Atomic Force Microscopy (AFM) lithography on an insulator layer starting from Silicon On Insulator (SOI) substrates. Electrical measurements reveal a high sensitivity of the electron transport in these ultra thin wires to the c