𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Fabrication and device characteristics of strained-Si-on-insulator (strained-SOI) CMOS

✍ Scribed by Shin-ichi Takagi; Tomohisa Mizuno; Tsutomu Tezuka; Naoharu Sugiyama; Toshinori Numata; Koji Usuda; Yoshihiko Moriyama; Shu Nakaharai; Junji Koga; Akihito Tanabe; Tatsuro Maeda


Publisher
Elsevier Science
Year
2004
Tongue
English
Weight
286 KB
Volume
224
Category
Article
ISSN
0169-4332

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Fabrication of strain-balanced Si0.73Ge0
✍ K Kawaguchi; S Koh; Y Shiraki; J Zhang πŸ“‚ Article πŸ“… 2002 πŸ› Elsevier Science 🌐 English βš– 142 KB

Si0:73Ge0:27=Si-distributed Bragg re ectors (DBRs) with high re ectivity were successfully fabricated by introducing the strain-balance method, which were designed to overcome the limitation of the number of pairs originating from the strain accumulation. X-ray di raction spectra and Raman spectra o

Effect of addition of V and C on strain
✍ Lin Chengxin; Wang Guixin; Wu Yandong; Liu Qingsuo; Zhang Jianjun πŸ“‚ Article πŸ“… 2006 πŸ› Elsevier Science 🌐 English βš– 464 KB

Shape recoverable strain, recovery stress and low-temperature stress relaxation characteristics in an Fe-17Mn-5Si-10Cr-4Ni (0.08C) alloy and an Fe-17Mn-2Cr-5Si-2Ni-1V (0.23C) alloy have been studied by means of X-ray diffraction, transmission electron microscopy and measurement of recoverable strain