Fabrication of strain-balanced Si0.73Ge0.27/Si-distributed Bragg reflectors on Si substrates for optical device applications
✍ Scribed by K Kawaguchi; S Koh; Y Shiraki; J Zhang
- Publisher
- Elsevier Science
- Year
- 2002
- Tongue
- English
- Weight
- 142 KB
- Volume
- 13
- Category
- Article
- ISSN
- 1386-9477
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✦ Synopsis
Si0:73Ge0:27=Si-distributed Bragg re ectors (DBRs) with high re ectivity were successfully fabricated by introducing the strain-balance method, which were designed to overcome the limitation of the number of pairs originating from the strain accumulation. X-ray di raction spectra and Raman spectra of Si0:73Ge0:27=Si DBRs showed that Si0:73Ge0:27 and Si layers were under compressive and tensile strain on Si0:89Ge0:11 virtual substrates as designed. A record re ectivity of 83% was achieved at 1:31 m in the DBR with 28.5 pairs. The modulated luminescence was also observed from SiGe planar microcavity structures with strain-balanced SiGe=Si DBRs.