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Fabrication and photoluminescence properties of silicon nanowires with thin surface oxide layers

โœ Scribed by Fengjun Shi; Jing Lin; Yang Huang; Jun Zhang; Chengchun Tang

Book ID
113783295
Publisher
Elsevier Science
Year
2009
Tongue
English
Weight
775 KB
Volume
118
Category
Article
ISSN
0254-0584

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## Abstract Ultra thin (8 nm) silicon nanowires have been fabricated by Atomic Force Microscopy (AFM) lithography on an insulator layer starting from Silicon On Insulator (SOI) substrates. Electrical measurements reveal a high sensitivity of the electron transport in these ultra thin wires to the c