𝔖 Bobbio Scriptorium
✦   LIBER   ✦

Electrical characteristics of silicon nanowire transistors fabricated by scanning probe and electron beam lithographies

✍ Scribed by Ryu, Yu Kyoung; Chiesa, Marco; Garcia, Ricardo


Book ID
125857499
Publisher
Institute of Physics
Year
2013
Tongue
English
Weight
727 KB
Volume
24
Category
Article
ISSN
0957-4484

No coin nor oath required. For personal study only.


πŸ“œ SIMILAR VOLUMES


Effect of Molecular Adsorption on the El
✍ Ping Shi; Jingying Zhang; Hsin-Yu Lin; Paul W. Bohn πŸ“‚ Article πŸ“… 2010 πŸ› John Wiley and Sons 🌐 English βš– 560 KB

## Abstract Metal nanowires are one of the potential candidates for nanostructured sensing elements used in future portable devices for chemical detection; however, the optimal methods for fabrication have yet to be fully explored. Two routes to nanowire fabrication, electron‐beam lithography (EBL)