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Silicon epitaxy on hydrogen-terminated Si(001) surfaces using thermal and energetic beams

✍ Scribed by M.V.Ramana Murty; Harry A. Atwater


Book ID
117216937
Publisher
Elsevier Science
Year
1997
Tongue
English
Weight
647 KB
Volume
374
Category
Article
ISSN
0039-6028

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Surface hydrogen and growth mechanisms are investigated for synchrotron radiation (SR)assisted gas source molecular beam epitaxy (SR-GSMBE) using Si 2 H 6 on the Si(100) surface in the low-temperature region. The surface silicon hydrides (deuterides) are monitored in situ during the epitaxial growth