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Reflection high energy electron diffraction and scanning tunnelling microscopy study of single-domain growth during silicon molecular beam epitaxy on Si(001)

✍ Scribed by A.J. Hoeven; E.J. Van Loenen; D. Dijkkamp; J.M. Lenssinck; J. Dieleman


Publisher
Elsevier Science
Year
1989
Tongue
English
Weight
804 KB
Volume
183
Category
Article
ISSN
0040-6090

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