Molecular beam epitaxial growth mechanism of ZnSe epilayers on (100) GaAs as determined by reflection high-energy electron diffraction, transmission electron microscopy and X-ray diffraction

✍ Scribed by P. Ruppert; D. Hommel; T. Behr; H. Heinke; A. Waag; G. Landwehr

• Publisher: Elsevier Science
• Year: 1994
• Tongue: English
• Weight: 443 KB
• Volume: 138
• Category: Article
• ISSN: 0022-0248
• DOI: 10.1016/0022-0248(94)90778-1