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Silicon and selenium implantation and activation in In0.53Ga0.47As under low thermal budget conditions

✍ Scribed by A. Alian; G. Brammertz; N. Waldron; C. Merckling; G. Hellings; H.C. Lin; W.E. Wang; M. Meuris; E. Simoen; K. De Meyer; M. Heyns


Publisher
Elsevier Science
Year
2011
Tongue
English
Weight
849 KB
Volume
88
Category
Article
ISSN
0167-9317

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✍ J.M. Schneider; J. Ziegler; H. Heinecke πŸ“‚ Article πŸ“… 1997 πŸ› Elsevier Science 🌐 English βš– 445 KB

Silicon and carbontetrabromide were used as dopant sources in the growth of GaAs/GaAs and Gao.47Inf).s3As/ lnP structures. We studied the incorporation behaviour of these group IV atoms on (100) and {111} surfaces as a function of growth temperature. The free carrier concentrations determined by Hal