Silicon doping and impurity profiles in Ga0.47In0.53As and Al0.48In0.52As grown by molecular beam epitaxy: K Y Cheng and A Y Cho, J Appl Phys, 53 (6), 1982, 4411–4415

• Publisher: Elsevier Science
• Year: 1983
• Tongue: English
• Weight: 196 KB
• Volume: 33
• Category: Article
• ISSN: 0042-207X
• DOI: 10.1016/0042-207x(83)90200-2