## Abstract Noise analysis for AlGaAs/GaAs HEMT and AlGaAs/InGaAs/GaAs PHEMT is developed at microwave frequency using an accurate charge control approach. The small‐signal parameters and the drain and gate‐noise sources are calculated to determine the noise coefficients and correlation coefficient
Signal-noise support vector model of a microwave transistor
✍ Scribed by Filiz Güneş; Nurhan Türker; Fikret Gürgen
- Publisher
- John Wiley and Sons
- Year
- 2007
- Tongue
- English
- Weight
- 527 KB
- Volume
- 17
- Category
- Article
- ISSN
- 1096-4290
No coin nor oath required. For personal study only.
✦ Synopsis
In this work, a support vector machines (SVM) model for the small-signal and noise behaviors of a microwave transistor is presented and compared with its artificial neural network (ANN) model. Convex optimization and generalization properties of SVM are applied to the black-box modeling of a microwave transistor. It has been shown that SVM has a high potential of accurate and efficient device modeling. This is verified by giving a worked example as compared with ANN which is another commonly used modeling technique. It can be concluded that hereafter SVM modeling is a strongly competitive approach against ANN modeling. V
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